Title :
Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET´s
Author :
Jin, Wei ; Chan, Philip C.H. ; Fung, Samuel K H ; Ko, Ping K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
fDate :
6/1/1999 12:00:00 AM
Abstract :
Floating-body partially depleted (PD) SOI MOSFET´s exhibit excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through the floating-body effect (FEE). A physically-based noise model is proposed which predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the characteristic frequency in noise spectrum and AC output impedance of the device
Keywords :
MOSFET; equivalent circuits; flicker noise; impact ionisation; semiconductor device models; semiconductor device noise; shot noise; silicon-on-insulator; AC output impedance; Lorentzian-like spectrum; Si; body-source diode current; characteristic frequency; excess LF noise; floating-body SOI MOSFET; impact ionization current; low-frequency noise; partially depleted SOI MOSFET; physically-based noise model; shot-noise-induced LF noise; 1f noise; Circuit noise; Frequency; Impact ionization; Impedance; Low-frequency noise; MOSFET circuits; Noise generators; Semiconductor device noise; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
