Title :
MOSFET´s negative transconductance at room temperature
Author :
Versari, Roberto ; Riccò, Bruno
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
fDate :
6/1/1999 12:00:00 AM
Abstract :
Negative transconductance is reported for the first time at T=300 K for NMOS transistors fabricated with different technologies and oxide thickness in the 3-20 nm range. The effects of drain bias, channel length, oxide thickness as well as substrate doping and bias on the phenomenon are investigated. The results are interpreted in terms of surface-roughness limited mobility, and parameters for mobility modeling at high effective fields are extracted
Keywords :
MOSFET; carrier mobility; high field effects; semiconductor device models; 3 to 20 nm; 300 K; NMOS transistors; channel length; drain bias; high effective fields; mobility modeling; n-MOSFET; n-channel MOSFET; negative transconductance; oxide thickness; room temperature; substrate doping; surface-roughness limited mobility; Degradation; Doping; Electron mobility; MOSFET circuits; Rough surfaces; Scattering; Semiconductor process modeling; Surface roughness; Temperature distribution; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
