Modeling the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor

Author

Wartenberg, Scott A. ; Westgate, Charles R.

Author_Institution

Hewlett-Packard Co., Newark, CA, USA

Volume

46

Issue

6

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

1207

Lastpage

1211

Abstract

This paper compares the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor (HBT) to that of a silicon bipolar junction transistor (BJT) fabricated with identical geometry. Derived is an isothermal expression for the forward Early voltage specifically suited to the base composition of a SiGe HBT. The expression includes two fit factors, one for the Si_1-xGe_x alloy and the other for the nonuniform doping density. The fit factors are functions of the device temperature and are determined through pulsed bias measurements

Keywords

Ge-Si alloys; doping profiles; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; Si_1-xGe_x alloy; SiGe; SiGe HBT; device temperature; fit factors; forward Early voltage; heterojunction bipolar transistor; isothermal expression; modeling; nonuniform doping density; pulsed bias measurements; temperature-dependent Early voltage; Doping; Geometry; Germanium alloys; Germanium silicon alloys; Heterojunction bipolar transistors; Isothermal processes; Pulse measurements; Silicon alloys; Silicon germanium; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.766886

Filename

766886