Title :
A 30-Gbit/s demultiplexer IC based on Si/SiGe emitter base heterojunction bipolar transistors
Author :
Schreiber, Hans-Ulrich ; Saxarra, M. ; Geppert, Werner
Author_Institution :
Ruhr-Univ., Bochum, Germany
fDate :
6/1/1999 12:00:00 AM
Abstract :
A 30-Gbit/s demultiplexer IC has been fabricated and tested using an improved double mesa Si/SiGe heterojunction bipolar transistor process. This is-to our knowledge-the highest ever reported bit rate for “real” (as opposed to drift transistor) Si/SiGe HBT circuits. The result was mainly reached by scaling down the transistor sizes to reduce parasitics. The minimum emitter mesa width was 1 μm
Keywords :
Ge-Si alloys; bipolar digital integrated circuits; demultiplexing equipment; elemental semiconductors; heterojunction bipolar transistors; high-speed integrated circuits; optical communication equipment; silicon; 1 mum; 30 Gbit/s; Si-SiGe; Si/SiGe HBT circuit; demultiplexer IC; double mesa emitter base heterojunction bipolar transistor; minimum emitter mesa width; parasitic reduction; transistor size scaling; Bipolar integrated circuits; Bipolar transistors; Doping; Etching; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Optical fiber communication; Planarization; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
