Title :
Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition
Author :
Furuta, Mamoru ; Kawaharamura, Toshiyuki ; Wang, Depang ; Toda, Tatsuya ; Hirao, Takashi
Author_Institution :
Inst. for Nanotechnol., Kochi Univ. of Technol., Kochi, Japan
fDate :
6/1/2012 12:00:00 AM
Abstract :
We developed a thin-film transistor (TFT) with an amorphous-indium-gallium-zinc oxide (IGZO) channel and aluminium oxide (AlOx) gate dielectric stack that was formed using a solution-based atmospheric pressure chemical vapor deposition. A breakdown electric field of 5.9 MV/cm and a dielectric constant of 6.8 were achieved for the AlOx gate dielectric. The nonvacuum-processed IGZO TFT gave a field-effect mobility of 4.2 cm2 · V-1 · s-1 and an on/off current ratio of over 108. Moreover, the proposed deposition method is a powerful tool for material research to explore multicomponent oxide insulators and semiconductors.
Keywords :
II-VI semiconductors; aluminium compounds; chemical vapour deposition; gallium compounds; indium compounds; thin film transistors; wide band gap semiconductors; zinc compounds; AlOx; IGZO channel; InGaZnO; aluminium oxide gate dielectric stack; deposition method; dielectric constant; electric breakdown; electrical properties; field-effect mobility; indium-gallium-zinc oxide channel; multicomponent oxide insulators; multicomponent oxide semiconductors; nonvacuum-processed IGZO TFT; solution-based atmospheric pressure chemical vapor deposition; solution-based atmospheric pressure deposition; thin-film transistor; Dielectrics; Electric breakdown; Logic gates; Surface treatment; Thin film transistors; Zinc oxide; Aluminum oxide; chemical vapor deposition; indium–gallium–zinc oxide (IGZO); thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2192902
