Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

Author

Furuta, Mamoru ; Kawaharamura, Toshiyuki ; Wang, Depang ; Toda, Tatsuya ; Hirao, Takashi

Author_Institution

Inst. for Nanotechnol., Kochi Univ. of Technol., Kochi, Japan

Volume

33

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

851

Lastpage

853

Abstract

We developed a thin-film transistor (TFT) with an amorphous-indium-gallium-zinc oxide (IGZO) channel and aluminium oxide (AlO_x) gate dielectric stack that was formed using a solution-based atmospheric pressure chemical vapor deposition. A breakdown electric field of 5.9 MV/cm and a dielectric constant of 6.8 were achieved for the AlO_x gate dielectric. The nonvacuum-processed IGZO TFT gave a field-effect mobility of 4.2 cm² · V^-1 · s^-1 and an on/off current ratio of over 10⁸. Moreover, the proposed deposition method is a powerful tool for material research to explore multicomponent oxide insulators and semiconductors.

Keywords

II-VI semiconductors; aluminium compounds; chemical vapour deposition; gallium compounds; indium compounds; thin film transistors; wide band gap semiconductors; zinc compounds; AlO_x; IGZO channel; InGaZnO; aluminium oxide gate dielectric stack; deposition method; dielectric constant; electric breakdown; electrical properties; field-effect mobility; indium-gallium-zinc oxide channel; multicomponent oxide insulators; multicomponent oxide semiconductors; nonvacuum-processed IGZO TFT; solution-based atmospheric pressure chemical vapor deposition; solution-based atmospheric pressure deposition; thin-film transistor; Dielectrics; Electric breakdown; Logic gates; Surface treatment; Thin film transistors; Zinc oxide; Aluminum oxide; chemical vapor deposition; indium–gallium–zinc oxide (IGZO); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2192902

Filename

6197214