The fundamental 1/f noise and the Hooge parameter in semiconductor quantum wires

Author

Balandin, A. ; Wang, K.L. ; Svizhenko, Alexei ; Bandyopadhyay, S.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

46

Issue

6

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

1240

Lastpage

1244

Abstract

We have calculated the Hooge parameter α_H characterizing fundamental 1/f noise in a free-standing intrinsic silicon quantum wire using microscopic noise theory. Our model takes into account quasi-one-dimensional confinement of both phonons and electrons. We find that at low temperatures, α_H can be reduced significantly by an external magnetic field which suppresses large-angle electron scattering. This allows one to quench 1/f noise. Furthermore, a magnetic field provides a convenient tool to probe the source of noise in quantum wires, and, to a certain degree, test the validity of the microscopic mobility-fluctuation quantum noise model itself

Keywords

1/f noise; elemental semiconductors; semiconductor quantum wires; silicon; 1/f noise; Hooge parameter; Si; electron scattering; magnetic field; microscopic mobility-fluctuation quantum noise model; quasi-one-dimensional confinement; semiconductor quantum wire; Electrons; Magnetic confinement; Magnetic fields; Magnetic noise; Microscopy; Phonons; Quantum mechanics; Semiconductor device noise; Silicon; Wire;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.766892

Filename

766892