The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors

Author

Park, Jae Chul ; Kim, Sang Wook ; Kim, Chang Jung ; Lee, Ho-Nyeon

Author_Institution

Inst. of Phys. & Appl. Phys., Yonsei Univ., Seoul, South Korea

Volume

33

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

809

Lastpage

811

Abstract

We investigated the effects of gadolinium (Gd) incorporation into indium-zinc-oxide (IZO) thin-film transistors (TFTs) using radio-frequency cosputtering of IZO and Gd. A gadolinium-indium-zinc-oxide (Gd-IZO) TFT with 2.4 at.% Gd content had saturation-mode field-effect mobility, threshold voltage, and switching ratio (on current/off current) of 6.6 cm²V^-1s^-1, 1.04 V, and on the order of 10⁷, respectively, after thermal annealing at 250 °C. A Gd-IZO TFT with 2.4 at.% Gd content showed better switching performance and thermal stability than pure IZO TFTs due to stable ionic bond between Gd and O.

Keywords

gadolinium; indium compounds; thermal stability; thin film transistors; gadolinium incorporation; gadolinium-indium-zinc-oxide TFT; indium-zinc-oxide thin-film transistors; radiofrequency cosputtering; saturation-mode field-effect mobility; switching performance; switching ratio; thermal stability; threshold voltage; Annealing; Iron; Logic gates; Sputtering; Thermal stability; Thin film transistors; Indium; thin-film transistors (TFTs); zinc;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2192710

Filename

6197218