Influence of process-induced stress on device characteristics and its impact on scaled device performance

Author

Smeys, Peter ; Griffin, Peter B. ; Rek, Zofia U. ; De Wolf, Ingrid ; Saraswat, Krishna C.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

Volume

46

Issue

6

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

1245

Lastpage

1252

Abstract

This paper reports on the effects of oxidation-induced stress on the generation current in pn-junction and gated diodes. It is observed that even in the regime where no extended defects are present, the generation current is a strong function of the compressive stress in the substrate. Experimental results are presented revealing an order of magnitude increase in generation current for stress changes of a few 100 MPa´s. A stress-induced bandgap narrowing model that describes the relationship between the oxidation-induced stress and the generation current in MOS devices is proposed and experimentally verified. Using this model, we have calculated the stress-induced generation current in scaled shallow trench isolated (STI) devices due to reoxidation after STI formation. As the device pitch is reduced a large increase in stress and leakage current is observed, consistent with the experimental data

Keywords

MOSFET; energy gap; internal stresses; isolation technology; leakage currents; oxidation; semiconductor diodes; MOSFET; bandgap narrowing; compressive stress; device scaling; gated diode; generation current; leakage current; oxidation; p-n junction diode; shallow trench isolation; Character generation; Compressive stress; Degradation; Isolation technology; Lattices; Leakage current; MOS devices; Photonic band gap; Semiconductor diodes; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.766893

Filename

766893