Title :
High-temperature operating 1.3-μm quantum-dot lasers for telecommunication applications
Author :
Klopf, F. ; Krebs, R. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
Abstract :
High-performance 1.3-μm-emitting quantum-dot lasers were fabricated by self-organized growth of InAs dots embedded in GaInAs quantum wells. The influence of the number of quantum-dot layers on the device performance was investigated. Best device results were achieved with six-dot layers. From the length dependence; a maximum ground state gain of 17 cm/sup -1/ for six dot layers could be determined. Ridge waveguide lasers with a cavity length of 400 μm and high-reflection coatings show threshold currents of 6 mA and output powers of more than 5 mV. Unmounted devices can be operated in continuous wave mode up to 85/spl deg/C. A maximum operating temperature of 160/spl deg/C was achieved in pulsed operation for an uncoated 2.5-mm-long ridge waveguide laser.
Keywords :
III-V semiconductors; indium compounds; infrared sources; laser cavity resonators; laser modes; laser transitions; optical fabrication; optical transmitters; quantum well lasers; ridge waveguides; semiconductor quantum dots; waveguide lasers; 1.3 mum; 1.3-/spl mu/m quantum-dot lasers; 160 C; 2.5 mm; 400 mum; 6 mA; 85 C; GaInAs; GaInAs quantum wells; InAs; InAs dots; cavity length; continuous wave mode; device performance; high-reflection coatings; length dependence; maximum ground state gain; maximum operating temperature; output powers; pulsed operation; quantum-dot lasers; quantum-dot layers; ridge waveguide lasers; self-organized growth; six-dot layers; telecommunication applications; threshold currents; uncoated ridge waveguide laser; Coatings; Laser modes; Power generation; Power lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Stationary state; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
