Title :
Novel bi-directional tunneling program/erase NOR (BiNOR)-type flash EEPROM
Author :
Yang, Evans Ching-Song ; Liu, Cheng-Jye ; Liaw, Ming-Chi ; Chao, Tien-Sheng ; Hsu, Charles Ching-Hsiang
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
6/1/1999 12:00:00 AM
Abstract :
This paper presents a novel flash memory cell, BiNOR, suitable for high-speed, low-power, and high-performance application. The proposed BiNOR structure allows random access, channel Fowler-Nordheim (FN) tunneling program/erase in a NOR-type array (previously, channel FN tunneling program/erase could only be implemented in a NAND array). Using the designated localized P-well structure, BiNOR realizes the hot hole free, low-power bi-directional channel FN tunneling program and erase, and alleviates the oxide instability induced during source erase in the NOR-type flash memory
Keywords :
flash memories; high-speed integrated circuits; integrated memory circuits; low-power electronics; random-access storage; tunnelling; NOR-type array; NOR-type flash EEPROM; bi-directional tunneling program/erase; channel Fowler-Nordheim tunneling; flash memory cell; high-performance application; high-speed application; localized P-well structure; low-power application; random access; Bidirectional control; Chaos; Degradation; EPROM; Flash memory; Flash memory cells; Functional programming; Laboratories; Threshold voltage; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
