Title :
Room-temperature operation of InAs quantum-dash lasers on InP [001]
Author :
Wang, R.H. ; Stintz, A. ; Varangis, P.M. ; Newell, T.C. ; Li, H. ; Malloy, K.J. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP (001) substrates are reported. Pulsed room-temperature operation demonstrates wavelengths from 1.60 to 1.66 μm for one-, three-, and five-stack designs, a threshold current density as low as 410 A/cm2 for singlestack uncoated lasers, and a distinctly quantum-wire-like dependence of the threshold current on the laser cavity orientation. The maximal modal gains for lasing in the ground-state with the cavity perpendicular to the dash direction are determined to be 15 cm–1 for single-stack and 22 cm–1 for five-stack lasers.
Keywords :
III-V semiconductors; current density; indium compounds; laser cavity resonators; laser modes; laser transitions; molecular beam epitaxial growth; quantum well lasers; self-assembly; semiconductor quantum dots; 1.6 mum; 1.66 mum; InAs; InAs quantum-dash lasers; InP; dash direction; five-stack designs; laser cavity orientation; maximal modal gains; molecular beam epitaxy; pulsed room-temperature operation; quantum-wire-like dependence; room-temperature operation; self-assembled; single-stack uncoated lasers; threshold current; threshold current density; Atomic force microscopy; Diode lasers; Indium phosphide; Laser tuning; Lattices; Quantum dot lasers; Quantum dots; Semiconductor lasers; Substrates; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
