Title :
Eigenmode-Based Capacitance Calculations With Applications in Passivation Layer Design
Author :
Demeester, Thomas ; De Zutter, Daniël
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Ghent, Belgium
fDate :
6/1/2011 12:00:00 AM
Abstract :
The design of high-speed metallic interconnects such as microstrips requires the correct characterization of both the conductors and the surrounding dielectric environment, in order to accurately predict their propagation characteristics. A fast boundary integral equation approach is obtained by modeling all materials as equivalent surface charge densities in free space. The capacitive behavior of a finite dielectric environment can then be determined by means of a transformation matrix, relating these charge densities to the boundary value of the electric potential. In this paper, a new calculation method is presented for the important case that the dielectric environment is composed of homogeneous rectangles. The method, based on a surface charge expansion in terms of the Robin eigenfunctions of the considered rectangles, is not only more efficient than traditional methods, but is also more accurate, as shown in some numerical experiments. As an application, the design and behavior of a microstrip passivation layer is treated in some detail.
Keywords :
boundary integral equations; dielectric materials; eigenvalues and eigenfunctions; interconnections; matrix algebra; Robin eigenfunction; eigenmode-based capacitance calculation; electric potential; equivalent surface charge density; fast boundary integral equation approach; finite dielectric environment; free space; high-speed metallic interconnection; microstrip passivation layer; passivation layer design; transformation matrix; Approximation methods; Capacitance; Conductors; Dielectrics; Eigenvalues and eigenfunctions; Equations; Mathematical model; Capacitance; interconnects; microstrip design; passivation layer; robin eigenfunctions;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2011.2125789