• DocumentCode
    151291
  • Title

    Substrate layout evaluation for T-type three-level IGBT modules

  • Author

    Nan Zhu ; Min Chen ; Xingyao Zhang ; Jie Ma ; Dehong Xu

  • Author_Institution
    Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
  • fYear
    2014
  • fDate
    14-18 Sept. 2014
  • Firstpage
    4677
  • Lastpage
    4684
  • Abstract
    As a recently emerged topology and due to its advantages, T-type three-level converters have been gaining rapidly growing applications. This paper investigates the method to evaluate both the electrical and thermal performances of the T-type module substrate layout design. Convenient and efficient methods to evaluate stray inductance and thermal behavior within the module are used instead of the time consuming approach such as Finite Element Analysis. A case study of the substrate layout designs for a 1200V/100A T-type module is given to present the implementation of the evaluation methods. Sample modules adopting the studied layout designs have been fabricated, and tests have been done to verify the evaluation of stray inductances.
  • Keywords
    insulated gate bipolar transistors; performance evaluation; thermal engineering; T-type three-level IGBT modules; current 100 A; electrical performance evaluation; finite element analysis; stray inductance evaluation; substrate layout evaluation; thermal behavior; thermal performance evaluation; voltage 1200 V; Clamps; Inductance; Insulated gate bipolar transistors; Layout; Substrates; Thermal resistance; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
  • Conference_Location
    Pittsburgh, PA
  • Type

    conf

  • DOI
    10.1109/ECCE.2014.6954041
  • Filename
    6954041