DocumentCode :
151291
Title :
Substrate layout evaluation for T-type three-level IGBT modules
Author :
Nan Zhu ; Min Chen ; Xingyao Zhang ; Jie Ma ; Dehong Xu
Author_Institution :
Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
fYear :
2014
fDate :
14-18 Sept. 2014
Firstpage :
4677
Lastpage :
4684
Abstract :
As a recently emerged topology and due to its advantages, T-type three-level converters have been gaining rapidly growing applications. This paper investigates the method to evaluate both the electrical and thermal performances of the T-type module substrate layout design. Convenient and efficient methods to evaluate stray inductance and thermal behavior within the module are used instead of the time consuming approach such as Finite Element Analysis. A case study of the substrate layout designs for a 1200V/100A T-type module is given to present the implementation of the evaluation methods. Sample modules adopting the studied layout designs have been fabricated, and tests have been done to verify the evaluation of stray inductances.
Keywords :
insulated gate bipolar transistors; performance evaluation; thermal engineering; T-type three-level IGBT modules; current 100 A; electrical performance evaluation; finite element analysis; stray inductance evaluation; substrate layout evaluation; thermal behavior; thermal performance evaluation; voltage 1200 V; Clamps; Inductance; Insulated gate bipolar transistors; Layout; Substrates; Thermal resistance; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location :
Pittsburgh, PA
Type :
conf
DOI :
10.1109/ECCE.2014.6954041
Filename :
6954041
Link To Document :
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