• DocumentCode
    1513
  • Title

    LASIC: Loop-Aware Sleepy Instruction Caches Based on STT-RAM Technology

  • Author

    Junwhan Ahn ; Kiyoung Choi

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
  • Volume
    22
  • Issue
    5
  • fYear
    2014
  • fDate
    May-14
  • Firstpage
    1197
  • Lastpage
    1201
  • Abstract
    This brief presents an approach to reduce static power consumption in peripheral circuits of spin-transfer torque RAM (STT-RAM) instruction caches. It is based on the key observation that only a small set of instructions is accessed inside a program loop. We propose to add a small static RAM cache called loop cache between the processor and the L1 instruction cache made of STT-RAM. When the loop cache has an entire loop cached, the L1 instruction cache can be turned off to save energy during the execution of the loop. Experimental results show that the proposed approach achieves 49% reduction in energy consumption over the STT-RAM baseline.
  • Keywords
    cache storage; magnetoelectronics; random-access storage; L1 instruction cache; LASIC; STT-RAM technology; energy consumption; loop-aware sleepy instruction caches; peripheral circuits; program loop; spin-transfer torque RAM instruction caches; static power consumption reduction; Caches; instruction caches; loop caches; low power; power gating; spin-transfer torque RAM (STT-RAM); spin-transfer torque RAM (STT-RAM).;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2013.2265278
  • Filename
    6544280