DocumentCode :
1513
Title :
LASIC: Loop-Aware Sleepy Instruction Caches Based on STT-RAM Technology
Author :
Junwhan Ahn ; Kiyoung Choi
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Volume :
22
Issue :
5
fYear :
2014
fDate :
May-14
Firstpage :
1197
Lastpage :
1201
Abstract :
This brief presents an approach to reduce static power consumption in peripheral circuits of spin-transfer torque RAM (STT-RAM) instruction caches. It is based on the key observation that only a small set of instructions is accessed inside a program loop. We propose to add a small static RAM cache called loop cache between the processor and the L1 instruction cache made of STT-RAM. When the loop cache has an entire loop cached, the L1 instruction cache can be turned off to save energy during the execution of the loop. Experimental results show that the proposed approach achieves 49% reduction in energy consumption over the STT-RAM baseline.
Keywords :
cache storage; magnetoelectronics; random-access storage; L1 instruction cache; LASIC; STT-RAM technology; energy consumption; loop-aware sleepy instruction caches; peripheral circuits; program loop; spin-transfer torque RAM instruction caches; static power consumption reduction; Caches; instruction caches; loop caches; low power; power gating; spin-transfer torque RAM (STT-RAM); spin-transfer torque RAM (STT-RAM).;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2013.2265278
Filename :
6544280
Link To Document :
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