Title :
Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz
Author :
Kinsey, G.S. ; Campbell, J.C. ; Dentai, A.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
An In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As waveguide avalanche photodiode with a record gain-bandwidth product of over 320 GHz has been demonstrated. A bandwidth of 28 GHz was achieved at low gains with low excess noise and a quantum efficiency of 16% at 1.55 μm.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; optical noise; optical waveguides; photodetectors; 1.55 mum; 16 percent; 28 GHz; In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As waveguide avalanche photodiode; gain-bandwidth product; low excess noise; low gains; quantum efficiency; waveguide avalanche photodiode; Absorption; Avalanche photodiodes; Bandwidth; Contacts; Indium phosphide; Optical fiber devices; Optical noise; Optical receivers; Optical waveguides; Parasitic capacitance;
Journal_Title :
Photonics Technology Letters, IEEE
