• DocumentCode
    1513226
  • Title

    MOSIS - A gateway to silicon

  • Author

    Tomovich, Christine

  • Author_Institution
    Inf. Sci. Inst., Univ. of Southern California, CA, USA
  • Volume
    4
  • Issue
    2
  • fYear
    1988
  • fDate
    3/1/1988 12:00:00 AM
  • Firstpage
    22
  • Lastpage
    23
  • Abstract
    The MOSIS Service, a low-cost prototyping service for standard-cell and full-custom VLSI circuit development, is discussed. MOSIS (an acronym for MOS Implementation System) has developed a methodology that allows the merging of many different projects from various organizations onto one wafer. This cost-sharing gives designers opportunities that might be prohibitive at regular commercial prices. Since designs are combined on a single mask set. MOSIS users pay for only the fraction of the silicon that they use. Runs are scheduled on a regular basis for 3.0-, 2.0-, 1.6-, and 1.2- mu m double-metal CMOS/bulk technologies. MOSIS quality control and access to MOSIS are described.<>
  • Keywords
    CMOS integrated circuits; VLSI; field effect integrated circuits; masks; quality control; 1.2 micron; 1.6 micron; 2.0 micron; 3.0 micron; MOS Implementation System; MOSIS Service; VLSI circuit development; bulk technologies; double-metal CMOS; full-custom; prototyping service; quality control; single mask set; standard-cell; wafer; CMOS technology; Costs; Fabrication; Government; Inspection; Packaging; Prototypes; Silicon; Testing; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/101.936
  • Filename
    936