DocumentCode :
1513226
Title :
MOSIS - A gateway to silicon
Author :
Tomovich, Christine
Author_Institution :
Inf. Sci. Inst., Univ. of Southern California, CA, USA
Volume :
4
Issue :
2
fYear :
1988
fDate :
3/1/1988 12:00:00 AM
Firstpage :
22
Lastpage :
23
Abstract :
The MOSIS Service, a low-cost prototyping service for standard-cell and full-custom VLSI circuit development, is discussed. MOSIS (an acronym for MOS Implementation System) has developed a methodology that allows the merging of many different projects from various organizations onto one wafer. This cost-sharing gives designers opportunities that might be prohibitive at regular commercial prices. Since designs are combined on a single mask set. MOSIS users pay for only the fraction of the silicon that they use. Runs are scheduled on a regular basis for 3.0-, 2.0-, 1.6-, and 1.2- mu m double-metal CMOS/bulk technologies. MOSIS quality control and access to MOSIS are described.<>
Keywords :
CMOS integrated circuits; VLSI; field effect integrated circuits; masks; quality control; 1.2 micron; 1.6 micron; 2.0 micron; 3.0 micron; MOS Implementation System; MOSIS Service; VLSI circuit development; bulk technologies; double-metal CMOS; full-custom; prototyping service; quality control; single mask set; standard-cell; wafer; CMOS technology; Costs; Fabrication; Government; Inspection; Packaging; Prototypes; Silicon; Testing; Very large scale integration;
fLanguage :
English
Journal_Title :
Circuits and Devices Magazine, IEEE
Publisher :
ieee
ISSN :
8755-3996
Type :
jour
DOI :
10.1109/101.936
Filename :
936
Link To Document :
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