DocumentCode :
1513455
Title :
Multilevel inverters for low-power application
Author :
De, Suvranu ; Banerjee, Debashis ; Siva Kumar, K. ; Gopakumar, K. ; Ramchand, Rijil ; Patel, Chirag
Author_Institution :
Power Electron. Group, Honeywell Technol. Solutions, Bangalore, India
Volume :
4
Issue :
4
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
384
Lastpage :
392
Abstract :
Multilevel inverters are an attractive solution in the medium-voltage and high-power applications. However in the low-power range also it can be a better solution compared to two-level inverters, if MOSFETs are used as devices switching in the order of 100 kHz. The effect of clamping diodes in the diode-clamped multilevel inverters play an important role in determining its efficiency. Power loss introduced by the reverse recovery of MOSFET body diode prohibits the use of MOSFET in hard-switched inverter legs. A technique of avoiding reverse recovery loss of MOSFET body diode in a three-level neutral point clamped inverter is suggested. The use of multilevel inverters topology enables operation at high switching frequency without sacrificing efficiency. High switching frequency of operation reduces the output filter requirement, which in turn helps in reducing the size of the inverter. This study elaborates the trade-off analysis to quantify the suitability of multilevel inverters in the low-power applications. Advantages of using a MOSFET-based three-level diode-clamped inverter for a PM motor drive and UPS systems are discussed.
Keywords :
invertors; motor drives; permanent magnet motors; power MOSFET; semiconductor diodes; switching convertors; uninterruptible power supplies; MOSFET; UPS systems; clamping diode; diode clamped multilevel inverter; permanent magnet motor drive; switching frequency; three-level neutral point clamped inverter;
fLanguage :
English
Journal_Title :
Power Electronics, IET
Publisher :
iet
ISSN :
1755-4535
Type :
jour
DOI :
10.1049/iet-pel.2010.0027
Filename :
5765585
Link To Document :
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