DocumentCode :
1513492
Title :
Low Noise Group Delay Equalization Technique for UWB InGaP/GaAs HBT LNA
Author :
Ahn, Kyoung-Pyo ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution :
Univ. of Electro-Commun., Chofu, Japan
Volume :
20
Issue :
7
fYear :
2010
fDate :
7/1/2010 12:00:00 AM
Firstpage :
405
Lastpage :
407
Abstract :
This letter describes an ultra-wideband (UWB) LNA designed with the aim of achieving both flat group delay variation and a low noise characteristic. Negative group delay (NGD) circuits are good candidates for compensating the group delay variation; however, they have inherent resistances that deteriorate the noise figure (NF). Therefore, an NGD circuit is applied to the latter part of a prototype amplifier. Similarly, a noise matching circuit is applied to the group-delay-equalized amplifier with consideration for its effect on the group delay variation. The LNA with an NGD circuit and a noise matching circuit is fabricated on an InGaP/GaAs MMIC substrate. The fabricated LNA achieved a group delay variation of 11.2 ps, a NF of 1.95-3.54 dB, a maximum gain of 12.3 dB, and a gain variation of 1.1 dB in the UWB band (3.1-10.6 GHz).
Keywords :
MMIC amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; low noise amplifiers; InGaP-GaAs; MMIC substrate; UWB HBT LNA; flat group delay variation; frequency 3.1 GHz to 10.6 GHz; gain 1.1 dB; gain 12.3 dB; group-delay-equalized amplifier; low noise group delay equalization technique; negative group delay circuits; noise figure 1.95 dB to 3.54 dB; noise matching circuit; prototype amplifier; time 11.2 ps; Group delay; low noise amplifier (LNA); negative group delay (NGD) circuit; ultra-wideband (UWB);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2010.2049441
Filename :
5483110
Link To Document :
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