Title :
A Fully Integrated CMOS Accelerometer Using Bondwire Inertial Sensing
Author :
Liao, Yu-Te ; Biederman, William J. ; Otis, Brian P.
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
Abstract :
This paper presents the design, implementation, and characterization of a fully integrated accelerometer using a bondwire inertial sensor. The accelerometer was implemented in a standard CMOS process without microelectromechanical processing. The system consists of a gold and aluminum bondwire inertial sensor and readout circuitry. Finite-element analysis was used to characterize the mechanical performance of the accelerometer and reinforce empirical data. The system includes a fully differential frequency modulation downconversion architecture and consumes 13.5 mW while achieving a gain of 10 kHz/g, a bandwidth of 700 Hz, and a resolution of 80 mg. The chip was fabricated in an 0.13-m CMOS process with an area of 1.1 mm.
Keywords :
CMOS integrated circuits; accelerometers; finite element analysis; CMOS accelerometer; bandwidth 700 Hz; bondwire inertial sensing; finite-element analysis; frequency modulation downconversion architecture; power 13.5 mW; size 0.13 mum; Accelerometers; Aluminum; Bonding; CMOS process; Frequency modulation; Gold; Mechanical sensors; Micromechanical devices; Sensor phenomena and characterization; Sensor systems; Accelerometer; bondwires; sensors;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2010.2052031