Title :
Model of low frequency noise in polycrystalline silicon thin-film transistors
Author :
Dimitriadis, Charalabos A. ; Kamarinos, George ; Brini, Jean
Author_Institution :
Dept. of Phys., Thessaloniki Univ., Greece
Abstract :
A model for the low frequency noise of polycrystalline silicon thin film transistors (polysilicon TFTs) is proposed. The model takes into account fluctuations of the grain boundary potential barrier induced by those of the grain boundary interface charge and fluctuations of carriers due to trapping in oxide traps located close to the interface. Using the proposed model, it is demonstrated that both grain boundary and oxide traps can be determined in polysilicon TFTs from noise measurements.
Keywords :
MOSFET; elemental semiconductors; fluctuations; grain boundaries; interface states; semiconductor device models; semiconductor device noise; silicon; thin film transistors; LF noise model; Si-SiO/sub 2/; carrier fluctuations; grain boundary interface charge; grain boundary potential barrier; low frequency noise; noise measurements; oxide traps; poly-Si thin-film transistors; polycrystalline Si TFT; polysilicon TFTs; potential barrier fluctuations; Acoustical engineering; Electron traps; Fluctuations; Grain boundaries; Low-frequency noise; MOSFETs; Noise measurement; Silicon; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
