Model of low frequency noise in polycrystalline silicon thin-film transistors

Author

Dimitriadis, Charalabos A. ; Kamarinos, George ; Brini, Jean

Author_Institution

Dept. of Phys., Thessaloniki Univ., Greece

Volume

22

Issue

8

fYear

2001

Firstpage

381

Lastpage

383

Abstract

A model for the low frequency noise of polycrystalline silicon thin film transistors (polysilicon TFTs) is proposed. The model takes into account fluctuations of the grain boundary potential barrier induced by those of the grain boundary interface charge and fluctuations of carriers due to trapping in oxide traps located close to the interface. Using the proposed model, it is demonstrated that both grain boundary and oxide traps can be determined in polysilicon TFTs from noise measurements.

Keywords

MOSFET; elemental semiconductors; fluctuations; grain boundaries; interface states; semiconductor device models; semiconductor device noise; silicon; thin film transistors; LF noise model; Si-SiO/sub 2/; carrier fluctuations; grain boundary interface charge; grain boundary potential barrier; low frequency noise; noise measurements; oxide traps; poly-Si thin-film transistors; polycrystalline Si TFT; polysilicon TFTs; potential barrier fluctuations; Acoustical engineering; Electron traps; Fluctuations; Grain boundaries; Low-frequency noise; MOSFETs; Noise measurement; Silicon; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.936350

Filename

936350