Title :
High-frequency performance of diamond field-effect transistor
Author :
Taniuchi, H. ; Umezawa, H. ; Arima, T. ; Tachiki, M. ; Kawarada, H.
Author_Institution :
Sch. of Sci. & Eng., Waseda Univ., Tokyo, Japan
Abstract :
The microwave performance of a diamond metal-semiconductor field-effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source-gate spacing of 0.1 μm were fabricated on the hydrogen-terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self-aligned gate fabrication process. A maximum transconductance of 70 mS/mm was obtained on a 2 μm gate MESFET at V/sub GS/=-1.5 V and V/sub DS/=-5 V,for which a cutoff frequency fT and a maximum oscillating frequency fmax of 2.2 GHz and 7 GHz were obtained, respectively.
Keywords :
S-parameters; Schottky gate field effect transistors; diamond; elemental semiconductors; microwave field effect transistors; plasma CVD coatings; semiconductor device measurement; -1.5 V; -5 V; 0.1 mum; 2 to 3 mum; 2.2 GHz; 7 GHz; 70 mS/mm; C; S-parameter; cutoff frequency; diamond MESFET; gate length; hydrogen-terminated surface; maximum oscillating frequency; maximum transconductance; metal-semiconductor field-effect transistor; microwave performance; microwave plasma chemical vapor deposition; self-aligned gate fabrication process; source-gate spacing; undoped diamond film; Chemical vapor deposition; Cutoff frequency; Fabrication; MESFETs; Microwave FETs; Plasma chemistry; Plasma sources; Plasma temperature; Surface resistance; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
