DocumentCode
1513721
Title
Pi-Gate SOI MOSFET
Author
Park, Jong-Tae ; Colinge, Jean-Pierre ; Diaz, Carlos H.
Author_Institution
Taiwan Semicond. Manuf. Corp., Hsinchu, Taiwan
Volume
22
Issue
8
fYear
2001
Firstpage
405
Lastpage
406
Abstract
This paper describes computer simulations of various SOI MOSFETs with double and triple gate structures, as well as gate-all-around devices. The concept of a triple-gate device with sidewalls extending into the buried oxide (hereby called a "/spl Pi/-gate" or "Pi-gate" MOSFET) is introduced, The proposed device is simple to manufacture and offers electrical characteristics similar to the much harder to fabricate gate-all-around MOSFET.
Keywords
MOSFET; buried layers; semiconductor device models; silicon-on-insulator; /spl Pi/-gate MOSFET; Pi-Gate SOI MOSFET; buried oxide; computer simulations; double gate structure; electrical characteristics; gate-all-around devices; subthreshold characteristics; triple gate structure; CMOS process; Computer simulation; Electric variables; FETs; MOS devices; MOSFET circuits; Manufacturing processes; Semiconductor device manufacture; Silicon on insulator technology; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.936358
Filename
936358
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