• DocumentCode
    1513904
  • Title

    Erratum to "0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET\´s with 300 GHz fT and 2 S/mm extrinsic transconductance"

  • Volume
    20
  • Issue
    6
  • fYear
    1999
  • fDate
    6/1/1999 12:00:00 AM
  • Firstpage
    307
  • Lastpage
    307
  • Abstract
    Due to an editorial error in the above-named letter, the word "An" was erroneously inserted before the title. The title should appear as above both in the paper and on the Table of Contents.
  • Keywords
    HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.1999.767107
  • Filename
    767107
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1513904