Title :
Erratum to "0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET\´s with 300 GHz fT and 2 S/mm extrinsic transconductance"
fDate :
6/1/1999 12:00:00 AM
Abstract :
Due to an editorial error in the above-named letter, the word "An" was erroneously inserted before the title. The title should appear as above both in the paper and on the Table of Contents.
Keywords :
HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.1999.767107
