• DocumentCode
    1514014
  • Title

    Power Semiconductor Devices: For Variable Speed Drives

  • Author

    Hudgins, Jerry L. ; De Doncker, Rik W.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Nebraska, Lincoln, NE, USA
  • Volume
    18
  • Issue
    4
  • fYear
    2012
  • Firstpage
    18
  • Lastpage
    25
  • Abstract
    Historically, power semiconductor devices have been divided into three broad categories: diodes, transistors, and thyristors. Although modern devices can be classified in this way, there is an increasing overlap in device design and function. Also semiconductors, such as silicon carbide (SiC), gallium nitride (GaN), and other materials, as well as novel device designs have increased the suitability and broadened the applications of semiconductor switches in megawatt (MW) power conversion circuits and systems.
  • Keywords
    III-V semiconductors; gallium compounds; power convertors; power semiconductor switches; silicon compounds; thyristors; variable speed drives; wide band gap semiconductors; GaN; SiC; device design; power conversion circuits; power semiconductor devices; semiconductor switches; thyristors; variable speed drives; Electric fields; Electrodes; Insulated gate bipolar transistors; Logic gates; Semiconductor devices; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Industry Applications Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1077-2618
  • Type

    jour

  • DOI
    10.1109/MIAS.2012.2191341
  • Filename
    6197795