DocumentCode
1514014
Title
Power Semiconductor Devices: For Variable Speed Drives
Author
Hudgins, Jerry L. ; De Doncker, Rik W.
Author_Institution
Dept. of Electr. Eng., Univ. of Nebraska, Lincoln, NE, USA
Volume
18
Issue
4
fYear
2012
Firstpage
18
Lastpage
25
Abstract
Historically, power semiconductor devices have been divided into three broad categories: diodes, transistors, and thyristors. Although modern devices can be classified in this way, there is an increasing overlap in device design and function. Also semiconductors, such as silicon carbide (SiC), gallium nitride (GaN), and other materials, as well as novel device designs have increased the suitability and broadened the applications of semiconductor switches in megawatt (MW) power conversion circuits and systems.
Keywords
III-V semiconductors; gallium compounds; power convertors; power semiconductor switches; silicon compounds; thyristors; variable speed drives; wide band gap semiconductors; GaN; SiC; device design; power conversion circuits; power semiconductor devices; semiconductor switches; thyristors; variable speed drives; Electric fields; Electrodes; Insulated gate bipolar transistors; Logic gates; Semiconductor devices; Thyristors;
fLanguage
English
Journal_Title
Industry Applications Magazine, IEEE
Publisher
ieee
ISSN
1077-2618
Type
jour
DOI
10.1109/MIAS.2012.2191341
Filename
6197795
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