Title :
Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems
Author :
Makioka, Satoshi ; Anda, Yoshiharu ; Miyatsuji, Kazuo ; Ueda, Daisuke
Author_Institution :
Discrete Device Div., Matsushita Electron. Corp., Kyoto, Japan
fDate :
8/1/2001 12:00:00 AM
Abstract :
An extremely low loss switch IC has been implemented by using a 0.15 μm-gate super self-aligned FET with reduced drain/source area. Both off-state-capacitance and the specific on-resistance of the implemented FET have been dramatically reduced by the novel device structure. The experimentally fabricated switch IC showed the low insertion loss of 0.25 dB at an added power of 35 dBm at a frequency of 0.9 GHz, which is the lowest value ever reported
Keywords :
HEMT integrated circuits; III-V semiconductors; UHF field effect transistors; UHF integrated circuits; capacitance; cellular radio; gallium arsenide; microwave switches; switching circuits; telephone sets; 0.15 μm-gate super self-aligned FET; 0.15 mum; 0.25 dB; 0.9 GHz; GSM handset; GaAs; MODFET; RFIC; added power; extremely low insertion loss; mobile communication systems; off-state-capacitance; reduced drain/source area; specific on-resistance; super self-aligned GaAs RF switch IC; Capacitance; Communication switching; FET integrated circuits; Gallium arsenide; Insertion loss; Mobile communication; Radio frequency; Radiofrequency integrated circuits; Switches; Switching circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
