Design and analysis of heterojunction bipolar transferred electron devices

Author

Twynam, John K. ; Yagura, Motoji ; Takahashi, Naoki ; Suematsu, Eiji ; Sakuno, Keiichi ; Sato, Hiroya

Author_Institution

Adv. Technol. Res. Labs., Sharp Corp., Nara, Japan

Volume

48

Issue

8

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1531

Lastpage

1539

Abstract

The design of the heterojunction bipolar transferred electron device (HBTED) is considered. MOCVD-grown AlGaAs/GaAs HBTEDs were fabricated and 60 GHz operation was confirmed by on-wafer measurements. Analysis of the device operation is aided by the use of Monte Carlo device simulations, equivalent circuit model simulations and two-dimensional (2-D) drift-diffusion model simulations and the simulation results are compared with measurements on the fabricated HBTEDs and HBTED test structures. The effects of the external base-collector region and current spreading in the collector region are investigated and the latter is found to be of great importance. Our simulations show that having an appropriately graded collector doping profile can compensate the current spreading and this hypothesis is supported by measurement results. Conclusions are drawn regarding the design of practical HBTEDs for mm-wave oscillator applications

Keywords

Gunn devices; Gunn oscillators; III-V semiconductors; Monte Carlo methods; aluminium compounds; doping profiles; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; millimetre wave oscillators; semiconductor device models; semiconductor device testing; 60 GHz; 60 GHz operation; AlGaAs-GaAs; HBTED test structures; MOCVD-grown AlGaAs/GaAs HBTEDs; Monte Carlo device simulations; collector region; current spreading; design; equivalent circuit model simulations; external base-collector region; graded collector doping profile; heterojunction bipolar transferred electron devices; mm-wave oscillator applications; on-wafer measurements; two-dimensional drift-diffusion model simulations; Analytical models; Circuit simulation; Circuit testing; Electrons; Equivalent circuits; Gallium arsenide; Gunn devices; Heterojunctions; Monte Carlo methods; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.936504

Filename

936504