Title :
Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma
Author :
Sekine, Katsuyuki ; Saito, Yuji ; Hirayama, Masaki ; Ohmi, Tadahiro
fDate :
8/1/2001 12:00:00 AM
Abstract :
This paper focuses attention on electrical properties of silicon oxide films grown by oxygen radical generated in Kr/O2 mixed high-density microwave-excited plasma at 400°C. They represent high growth rate, low activation energy, high dielectric strength, high charge-to-breakdown, and low interface trap density and bulk charge enough to replace thermally grown silicon oxide
Keywords :
MOS capacitors; MOSFET; dielectric thin films; electric breakdown; electric strength; interface states; oxidation; plasma materials processing; semiconductor device reliability; silicon compounds; 400 C; Kr-O2; Kr/O2 mixed high-density microwave-excited plasma; MOS capacitors; MOSFET; Si; Si-SiO2; bulk charge; electrical properties; high charge-to-breakdown; high dielectric strength; high growth rate; high-density krypton plasma; low activation energy; low interface trap density; low temperature formation; oxygen radical; reliable ultrathin SiOx film; Manufacturing processes; Microwave generation; Oxidation; Oxygen; Plasma density; Plasma properties; Plasma temperature; Semiconductor films; Silicon; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
