Title :
Hydrogenated amorphous silicon-germanium PIN X-ray detector
Author :
Liu, Sheng-Da ; Lee, Si-Chen ; Chern, Ming-Yau
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
8/1/2001 12:00:00 AM
Abstract :
The hydrogenated amorphous silicon-germanium (a-Si1-xGe x:H) pin X-ray detector has been fabricated successfully. It is found by introducing germanium into the amorphous silicon film, the X-ray detection efficiency is almost twice improved. This is due to the fact that the energy gap of a-Si1-xGex:H is smaller than that of a-Si:H
Keywords :
Ge-Si alloys; X-ray detection; amorphous semiconductors; energy gap; hydrogen; p-i-n photodiodes; semiconductor counters; Si0.44Ge0.56:H; X-ray detection efficiency; a-Si1-xGex:H pin X-ray detector; energy gap; hydrogenated amorphous silicon-germanium; plasma enhanced CVD; Alloying; Amorphous materials; Amorphous silicon; Germanium silicon alloys; Image edge detection; Optical films; Photovoltaic cells; Silicon germanium; Stimulated emission; X-ray detectors;
Journal_Title :
Electron Devices, IEEE Transactions on
