Title :
Inversion charge modeling
Author :
Gummel, Hermann K. ; Singhal, Kumud
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
fDate :
8/1/2001 12:00:00 AM
Abstract :
A simple, implicit, relation for the inversion charge density in the channel of metal oxide semiconductor (MOS) transistors is presented. The relation is continuous and covers the whole operating range, from subthreshold to strong inversion. The derivative of the local inversion charge density with respect to the channel voltage is a simple expression in the charge density, leading to analytic integrals as required for obtaining the drain current and the capacitance coefficients
Keywords :
MOSFET; capacitance; electric charge; inversion layers; semiconductor device models; MOST; analytic integrals; capacitance coefficients; channel voltage; drain current; inversion charge density; inversion charge modeling; local inversion charge density derivative; metal oxide semiconductor transistor channel; saturation voltage; strong inversion; subthreshold; Capacitance; Charge carrier processes; Electrons; Electrostatics; MOS devices; MOSFETs; Qualifications; Semiconductor devices; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
