DocumentCode
1514157
Title
Inversion charge modeling
Author
Gummel, Hermann K. ; Singhal, Kumud
Author_Institution
Agere Syst., Murray Hill, NJ, USA
Volume
48
Issue
8
fYear
2001
fDate
8/1/2001 12:00:00 AM
Firstpage
1585
Lastpage
1593
Abstract
A simple, implicit, relation for the inversion charge density in the channel of metal oxide semiconductor (MOS) transistors is presented. The relation is continuous and covers the whole operating range, from subthreshold to strong inversion. The derivative of the local inversion charge density with respect to the channel voltage is a simple expression in the charge density, leading to analytic integrals as required for obtaining the drain current and the capacitance coefficients
Keywords
MOSFET; capacitance; electric charge; inversion layers; semiconductor device models; MOST; analytic integrals; capacitance coefficients; channel voltage; drain current; inversion charge density; inversion charge modeling; local inversion charge density derivative; metal oxide semiconductor transistor channel; saturation voltage; strong inversion; subthreshold; Capacitance; Charge carrier processes; Electrons; Electrostatics; MOS devices; MOSFETs; Qualifications; Semiconductor devices; Silicon; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.936564
Filename
936564
Link To Document