Title :
Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology
Author :
Mizuno, Tomohisa ; Sugiyama, Naoharu ; Kurobe, Atsushi ; Takagi, Shin-ichi
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
fDate :
8/1/2001 12:00:00 AM
Abstract :
We have newly developed an advanced SOI p-MOSFET with strained-Si channel on insulator (strained-SOI) structure fabricated by SIMOX (separation-by-implanted-oxygen) technology. The characteristics of this strained-SOI substrate and electrical properties of strained-SOI MOSFETs have been experimentally studied. Using strained-Si/relaxed-SiGe epitaxy technology and usual SIMOX process, we have successfully formed the layered structure of fully-strained-Si (20 nm)/fully-relaxed-SiGe film (290 nm) on uniform buried oxide layer (85 nm) inside SiGe layer. Good drain current characteristics have been obtained in strained-SOI MOSFETs. It is found that the hole mobility is enhanced in strained-SOI p-MOSFETs, compared to the universal hole mobility in an inversion layer and the mobility of control SOI p-MOSFETs. The enhancement of the drive current has been kept constant down to 0.3 μm of the effective channel length
Keywords :
Ge-Si alloys; MOSFET; SIMOX; elemental semiconductors; hole mobility; semiconductor materials; silicon; 20 nm; 290 nm; 85 nm; SIMOX technology; SOI p-MOSFETs; Si-SiGe; drain current characteristics; drive current; effective channel length; hole mobility; layered structure; strained-Si channel; uniform buried oxide layer; Fluctuations; Germanium silicon alloys; MOSFET circuits; Parasitic capacitance; Scattering; Silicon germanium; Silicon on insulator technology; Substrates; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
