Title :
High drive-current electrically induced body dynamic threshold SOI MOSFET (EIB-DTMOS) with large body effect and low threshold voltage
Author :
Takamiya, Makoto ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
fDate :
8/1/2001 12:00:00 AM
Abstract :
A novel electrically induced body dynamic threshold metal oxide semiconductor (EIB-DTMOS) is proposed where the body is electrically induced by substrate bias and its high performance is demonstrated by experiments and simulations. EIB-DTMOS achieves a large body effect and a low Vth at the same time. The upper limit of the supply voltage of the EIB-DTMOS is higher than that of a conventional DTMOS, because the forward biased p-n junction leakage current of the EIB-DTMOS is lower. Among several DTMOSs, the accumulation mode EIB-DTMOS shows the highest drive-current at fixed off-current due to a large Vth Shift (or large back gate capacitance) and a suppressed short channel effect
Keywords :
MOSFET; accumulation layers; capacitance; leakage currents; low-power electronics; silicon-on-insulator; SOI MOSFET; Si; accumulation mode; back gate capacitance; body effect; drive current; electrically induced body dynamic threshold; fixed off-current; forward biased p-n junction leakage current; short channel effect; substrate bias; supply voltage; threshold voltage; Board of Directors; Capacitance; Energy consumption; Helium; Leakage current; Low voltage; MOSFET circuits; Power MOSFET; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
