Title :
The low-high-low I-V characteristics of five to seven peaks based on four NDR devices
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ. of Technol., Tainan, Taiwan
fDate :
8/1/2001 12:00:00 AM
Abstract :
Some novel five-peak, six-peak, and seven-peak current-voltage (I-V) characteristics of four series-connected negative differential resistance (NDR) devices are investigated and demonstrated in this paper. Especially, the peak currents of these novel I-V characteristics are presented as a low-high-low situation. However, the magnitude of each peak current is almost the same or from low to high values gradually in traditional structure that connects identical devices in series. The results of this paper can provide some ideas for integrated circuits based on NDR devices
Keywords :
active networks; monolithic integrated circuits; negative resistance circuits; nonlinear network analysis; MVL circuits; integrated circuits; low-high-low I-V characteristics; multi-valued logic circuits; multiple peak I-V curves; negative differential resistance devices; peak currents; series-connected NDR devices; Application specific integrated circuits; Circuit analysis; Circuit synthesis; Complexity theory; Forward contracts; Gallium arsenide; Gallium nitride; Large scale integration; Piecewise linear techniques; Resistors;
Journal_Title :
Electron Devices, IEEE Transactions on
