A detailed investigation of the quantum yield experiment

Author

Ielmini, Daniele ; Spinelli, Alessandro S. ; Lacaita, Andrea L. ; DiMaria, Donelli J. ; Ghidini, Gabriella

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

48

Issue

8

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1696

Lastpage

1702

Abstract

A detailed investigation of the quantum yield (QY) experiment is proposed. Experimental data show that no correlation exists between the QY and the stress-induced leakage current (SILC), and that the QY is determined by high-energy oxide traps. Numerical simulations are then used, based on a detailed calculation of the oxide defect distribution. It is shown that the leakage current and the excess impact ionization component are due to trap-assisted tunneling (TAT) of electrons through different sets of traps: Deep levels are responsible for the SILC, while high-energy states determine the impact ionization current. Simulation results are in good agreement with experiments, showing that the QY results cannot be used to extract the energy loss of the SILC electrons

Keywords

MIS devices; deep levels; impact ionisation; leakage currents; tunnelling; deep levels; excess impact ionization component; high-energy oxide traps; high-energy states; impact ionization current; oxide defect distribution; quantum yield experiment; stress-induced leakage current; trap-assisted tunneling; Degradation; Electron traps; Energy loss; Impact ionization; Leakage current; MOS devices; Nonvolatile memory; Numerical simulation; Stress; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.936691

Filename

936691