Novel SiC accumulation-mode power MOSFET

Author

Liewih, H. ; Dimitrijev, Sima ; Weitzel, Charles E. ; Harrison, H.Barry

Author_Institution

Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia

Volume

48

Issue

8

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1711

Lastpage

1717

Abstract

In this paper, a new structure of Silicon Carbide (SiC) accumulation-mode MOSFET (ACCUFET) for high-power applications has been proposed and analyzed. The novel ACCUFET utilizes fully depleted N-channel epilayer, grown on P-base epilayer, to achieve normally-off operation. A trench region is formed by etching and is implanted to create N-type path that connects the N-channel epilayer (accumulation channel) to underlaying N-drift region. Detailed analysis of the important design parameters of the novel structure is performed using MEDICI two-dimensional (2-D) device simulator. The novel structure was also compared to alternative ACCUFET approaches, specifically planar and trench-gate ACCUFETs. The comparison shows that the novel structure provides the highest figure of merit (FOM) for power devices

Keywords

accumulation layers; isolation technology; power MOSFET; semiconductor device models; semiconductor epitaxial layers; semiconductor materials; silicon compounds; ACCUFET; MEDICI two-dimensional device simulator; N-drift region; N-type path; SiC; accumulation-mode power MOSFET; design parameters; figure of merit; fully depleted N-channel epilayer; high-power applications; normally-off operation; trench region; Analytical models; Electrons; Etching; MOSFET circuits; Medical simulation; Power MOSFET; Silicon carbide; Thermal conductivity; Two dimensional displays; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.936693

Filename

936693