Title :
A new method of threshold voltage extraction via MOSFET gate-to-substrate capacitance measurement
Author :
Lau, M.M. ; Chiang, C.Y.T. ; Yeow, Y.T. ; Yao, Z.Q.
Author_Institution :
Sch. of Comput. Sci. & Electr. Eng., Queensland Univ., Brisbane, Qld., Australia
fDate :
8/1/2001 12:00:00 AM
Abstract :
A new method to extract MOSFET threshold voltage VT by measurement of the gate-to-substrate capacitance Cgb of the transistor is presented. Unlike existing extraction methods based on I-V data, the measurement of Cgb does not require DC drain current to flow between drain nd source thus eliminating the effects of source and drain series resistance RSD/ , and at the same time, retains a symmetrical potential profile across the channel. Experimental and simulation results on devices with different sizes are presented to justify the proposed method
Keywords :
MOSFET; capacitance measurement; semiconductor device measurement; MEDICI simulation; MOSFET; depletion-inversion transition; gate-to-substrate capacitance measurement; symmetrical potential profile; threshold voltage extraction; zero drain current; CMOS technology; Capacitance measurement; Current measurement; Data mining; Electrical resistance measurement; Fabrication; MOSFET circuits; Silicides; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
