A PMOS tunneling photodetector

Author

Hsu, B.-C. ; Liu, C.W. ; Liu, W.T. ; Lin, C.-H.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

48

Issue

8

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1747

Lastpage

1749

Abstract

A metal/oxide/n-Si structure with ultrathin gate oxide is utilized as a photodetector. At inversion gate bias, the dark current and photocurrent are determined by both the minority carrier (hole) generation rate in the deep depletion region and the electrons tunneling from the gate electrode to n-type Si, while only the former component is significant in the NMOS photodetector. The electron tunneling current dominates the photocurrent at sufficiently large negative gate voltage, and the sensitivity of PMOS detectors is, therefore, enhanced by approximately one order of magnitude, as compared to NMOS detectors

Keywords

minority carriers; photodetectors; photodiodes; tunnel diodes; I-V curves; PMOS tunneling photodetector; Si; dark current; deep depletion region; electron tunneling current; enhanced sensitivity; inversion gate bias; minority carrier generation rate; photocurrent; tunneling diode; ultrathin gate oxide; Charge carrier processes; Dark current; Detectors; Electrodes; Electrons; MOS devices; Photoconductivity; Photodetectors; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.936700

Filename

936700