Suppression of boron transient-enhanced diffusion in SiGe HBTs by a buried carbon layer

Author

Jouan, Sébastien ; Baudry, Hélène ; Ditartre, D. ; Fellous, Cyril ; Laurens, Michel ; Lenoble, Damien ; Marty, Michel ; Monroy, Augustin ; Perrotin, André ; Ribot, Pascal ; Vincent, Gilbert ; Chantre, Alain

Author_Institution

France Telecom R&D, Meylan, France

Volume

48

Issue

8

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1765

Lastpage

1769

Abstract

The experiments described in this paper show that base broadening effects due to extrinsic base implantation in SiGe HBTs can be suppressed by introducing a buried carbon layer under the SiGe/Si base prior to epitaxy. They also demonstrate that SiGe HBTs with excellent static (β×V_AF~10⁴ V) and dynamic (f_TB×BV_CEO~200 GHz×V) characteristics can be fabricated using an epitaxially aligned in-situ-doped polysilicon emitter and an appropriately designed SiGe/Si base profile

Keywords

Ge-Si alloys; characteristics measurement; diffusion; heterojunction bipolar transistors; ion implantation; semiconductor device measurement; semiconductor materials; HBTs; SiGe-Si; base broadening effects; base profile; buried carbon layer; dynamic characteristics; epitaxially aligned in-situ-doped polysilicon emitter; extrinsic base implantation; static characteristics; transient-enhanced diffusion; Annealing; Atomic layer deposition; Boron; Carbon dioxide; Cutoff frequency; Electron traps; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.936705

Filename

936705