• DocumentCode
    1514347
  • Title

    Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices

  • Author

    Jurczak, Malgorzata ; Skotnicki, Thomas ; Gwoziecki, Roman ; Paoli, Maryse ; Tormen, Beatrice ; Ribot, Pascal ; Dutartre, Didier ; Monfray, Stephane ; Galvier, Jean

  • Author_Institution
    France Telecom R&D, Grenoble, France
  • Volume
    48
  • Issue
    8
  • fYear
    2001
  • fDate
    8/1/2001 12:00:00 AM
  • Firstpage
    1770
  • Lastpage
    1775
  • Abstract
    A new concept of dielectric pockets is proposed allowing suppression of short-channel effects (SCEs) and DIBL without increasing the channel doping. The dielectric pockets have been implanted into 0.15-μm PMOS devices showing substantial efficiency in reducing SCE and IOFF current without altering the current drive. The dielectric pockets thus embody the ideal pocket architecture
  • Keywords
    CMOS integrated circuits; MOSFET; dielectric thin films; ion implantation; 0.15 mum; DIBL; HDD junctions; PMOS devices; PMOSFET; bulk punchthrough; deca-nanometric CMOS devices; deep submicron CMOS; dielectric pockets; ideal pocket architecture; short-channel effects; simulation; CMOS technology; Capacitance; Dielectric devices; Dielectric substrates; Doping; MOS devices; Microelectronics; Research and development; Telecommunications; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.936706
  • Filename
    936706
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1514347