Title :
Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices
Author :
Jurczak, Malgorzata ; Skotnicki, Thomas ; Gwoziecki, Roman ; Paoli, Maryse ; Tormen, Beatrice ; Ribot, Pascal ; Dutartre, Didier ; Monfray, Stephane ; Galvier, Jean
Author_Institution :
France Telecom R&D, Grenoble, France
fDate :
8/1/2001 12:00:00 AM
Abstract :
A new concept of dielectric pockets is proposed allowing suppression of short-channel effects (SCEs) and DIBL without increasing the channel doping. The dielectric pockets have been implanted into 0.15-μm PMOS devices showing substantial efficiency in reducing SCE and IOFF current without altering the current drive. The dielectric pockets thus embody the ideal pocket architecture
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; ion implantation; 0.15 mum; DIBL; HDD junctions; PMOS devices; PMOSFET; bulk punchthrough; deca-nanometric CMOS devices; deep submicron CMOS; dielectric pockets; ideal pocket architecture; short-channel effects; simulation; CMOS technology; Capacitance; Dielectric devices; Dielectric substrates; Doping; MOS devices; Microelectronics; Research and development; Telecommunications; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
