Transformer isolated gate drive with protection for SiC MOSFET in high temperature application

This paper presents a high temperature (HT) gate drive and protection circuit using commercially available discrete components for SiC Power MOSFETs. The transformer isolated gate drive and protection circuit is designed, built and tested. Temperature dependence of the circuit is investigated and discussed, proving that the discrete component circuit can get rid of the leakage current caused by the Bulk CMOS technology and enable HT operation. It is demonstrated that the circuit can work well while placed on the top of a 300°C hotplate.