Title :
Failure mechanisms associated with the fabrication of InGaN-based LEDs
Author :
Maaskant, P.P. ; Akhter, M. ; Considine, L.
Author_Institution :
Photonics Group, NMRC, Cork
fDate :
8/1/2001 12:00:00 AM
Abstract :
In this paper, we report on the device fabrication and characterization of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) on sapphire substrates. Devices that showed nonrectifying behavior have been investigated and it is suggested that metal migration along defect tubes is the likely cause of this behavior, It is recommended to use lower alloying temperatures for the p-contact metallization to avoid this type of failure. Deposition and subsequent removal of sputtered oxide was also found to have a highly detrimental effect on the p-contact quality
Keywords :
III-V semiconductors; failure analysis; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor device metallisation; semiconductor device reliability; semiconductor technology; wide band gap semiconductors; Al2O3; InGaN-GaN; InGaN/GaN multiple quantum well light-emitting diodes; MQW LEDs; alloying temperature; defect tubes; device fabrication; failure mechanisms; metal migration; nonrectifying behavior; p-contact metallization; p-contact quality; sapphire substrates; sputtered oxide deposition; sputtered oxide removal; Etching; Fabrication; Failure analysis; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Metallization; Resists; Silicon compounds; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
