Title :
Low-threshold, high-temperature operation of 1.2 μm InGaAs vertical cavity lasers
Author :
Salomonsson, F. ; Asplund, C. ; Sundgren, P. ; Plaine, G. ; Mogg, S. ; Hammar, M.
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
fDate :
7/19/2001 12:00:00 AM
Abstract :
The growth and characterisation of high performance InGaAs/GaAs quantum-well vertical cavity lasers with an emission wavelength of 1215 nm is reported. Continuous wave operation is demonstrated up to 105°C with a threshold current below 1 mA for T<80°C. For a 2.5 μm device the room temperature threshold current, output power and slope efficiency is 0.6 mA, 0.6 mW and 0.2 W/A, respectively
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser beams; laser cavity resonators; quantum well lasers; vapour phase epitaxial growth; 0.6 mA; 0.6 mW; 1 mA; 1.2 mum; 105 C; 1215 nm; 2.5 mum; 298 K; 80 C; InGaAs; InGaAs vertical cavity lasers; continuous wave operation; emission wavelength; low-threshold high-temperature operation; output power; quantum-well vertical cavity lasers; room temperature threshold current; slope efficiency; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010644
