Title :
Mode-Locked Laser Array Monolithically Integrated With MMI Combiner, SOA, and EA Modulator
Author :
Hou, Lianping ; Haji, Mohsin ; Qiu, Bocang ; Bryce, A. Catrina
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
The monolithic integration of four 10-GHz 1.55- μm AlGaInAs/InP mode-locked surface-etched distributed Bragg reflector lasers with a 4 × 1 multimode-interference optical combiner, a curved semiconductor optical amplifier, and electroabsorption modulator using relatively simple technologies-surface-etched distributed Bragg reflector and quantum-well intermixing-has been demonstrated. Our techniques have the advantage of eliminating crystal regrowth and antireflection coating processes that are required in traditional methods. The four channels can operate separately or simultaneously. They also can be synchronized at the same pulse repetition frequency by the injection mode-locked technique.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; electro-optical modulation; electroabsorption; etching; gallium arsenide; indium compounds; laser mode locking; quantum well lasers; semiconductor laser arrays; semiconductor optical amplifiers; synchronisation; AlGaInAs-InP; EA modulator; MMI combiner; SOA; curved semiconductor optical amplifier; electroabsorption modulator; frequency 10 GHz; injection mode-locked technique; mode-locked surface-etched distributed Bragg reflector lasers; monolithic integration; multimode-interference optical combiner; pulse repetition frequency; quantum-well intermixing; surface-etched distributed Bragg reflector; wavelength 1.55 mum; Distributed Bragg reflectors; Laser mode locking; Optical reflection; Optical surface waves; Optical waveguides; Semiconductor optical amplifiers; Waveguide lasers; Laser array; mode-locked laser; multimode-interference; quantum-well intermixing (QWI); semiconductor optical amplifier (SOA); surface-etched Bragg gratings;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2154321