Multi-watt 1.25 μm quantum dot VECSEL

Author

Albrecht, Alexander R. ; Rotter, Tom J. ; Hains, Chris P. ; Stintz, A. ; Moloney, Jerome V. ; Malloy, K.J. ; Balakrishnan, Ganesh

Author_Institution

Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA

Volume

46

Issue

12

fYear

2010

Firstpage

856

Lastpage

857

Abstract

An InAs quantum dot (QD) vertical external cavity surface-emitting laser (VECSEL) operating at a wavelength of 1.25 m is reported. The gain region of the laser consists of a resonant periodic gain structure using single QD layers at 12 adjacent electrical field antinodes - a design optimised to reduce strain accumulation and improve QD quality. A fibre-coupled 808 nm laser diode is used as a pump source and a spherical external mirror completes the cavity. Thermal management is accomplished by bonding the VECSEL sample to a chemical vapour deposition (CVD) diamond heat spreader. Continuous wave output powers in excess of 3 W have been achieved at room temperature. The broad emission spectrum makes this device an ideal candidate for wavelength tunable or modelocked applications.

Keywords

III-V semiconductors; indium compounds; laser cavity resonators; laser mode locking; optical pumping; quantum dot lasers; surface emitting lasers; thermal management (packaging); CVD diamond heat spreader; InAs; broad emission spectrum; continuous wave output powers; electrical field antinodes; fibre-coupled laser diode; gain region; mode-locked applications; multiwatt quantum dot VECSEL; pump source; resonant periodic gain structure; spherical external mirror; temperature 293 K to 298 K; thermal management; vertical external cavity surface emitting laser; wavelength 1.25 mum; wavelength 808 nm;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2010.0849

Filename

5483968