Title :
Multi-watt 1.25 μm quantum dot VECSEL
Author :
Albrecht, Alexander R. ; Rotter, Tom J. ; Hains, Chris P. ; Stintz, A. ; Moloney, Jerome V. ; Malloy, K.J. ; Balakrishnan, Ganesh
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
Abstract :
An InAs quantum dot (QD) vertical external cavity surface-emitting laser (VECSEL) operating at a wavelength of 1.25 m is reported. The gain region of the laser consists of a resonant periodic gain structure using single QD layers at 12 adjacent electrical field antinodes - a design optimised to reduce strain accumulation and improve QD quality. A fibre-coupled 808 nm laser diode is used as a pump source and a spherical external mirror completes the cavity. Thermal management is accomplished by bonding the VECSEL sample to a chemical vapour deposition (CVD) diamond heat spreader. Continuous wave output powers in excess of 3 W have been achieved at room temperature. The broad emission spectrum makes this device an ideal candidate for wavelength tunable or modelocked applications.
Keywords :
III-V semiconductors; indium compounds; laser cavity resonators; laser mode locking; optical pumping; quantum dot lasers; surface emitting lasers; thermal management (packaging); CVD diamond heat spreader; InAs; broad emission spectrum; continuous wave output powers; electrical field antinodes; fibre-coupled laser diode; gain region; mode-locked applications; multiwatt quantum dot VECSEL; pump source; resonant periodic gain structure; spherical external mirror; temperature 293 K to 298 K; thermal management; vertical external cavity surface emitting laser; wavelength 1.25 mum; wavelength 808 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.0849
