Abstract :
A new class of RF switches have been developed by MIT Lincoln Laboratory in the US. The single chip high-performance vertically stacked switches are based on a wafer-scale 3D integration technology, and have a footprint that is much smaller than in conventional 2D switches. The approach, which is fully compatible with the standard Si CMOS process, could also be used for other types of circuit such as amplifiers, signal processors and imagers.
Keywords :
CMOS integrated circuits; microwave switches; radiofrequency integrated circuits; silicon; three-dimensional integrated circuits; wafer-scale integration; CMOS process; MIT Lincoln laboratory; RF switches; Si; US; amplifiers; conventional 2D switch; imagers; signal processors; single chip high-performance vertical stacked switch; wafer-scale 3D integration technology;
