Title :
2.6 μm GaSB based photonic crystal coupled cavity lasers
Author :
Moumdji, S. ; Larrue, A. ; Belharet, D. ; Dubreuil, P. ; Bonnefont, S. ; Gauthier-Lafaye, Olivier ; Rouillard, Y. ; Vicet, A.
Author_Institution :
CNRS, Univ. Montpellier 2, Montpellier, France
Abstract :
Long wavelength GaInAsSb/AlGaAsSb quantum wells lasers have been grown by molecular beam epitaxy and processed into ridge cavities coupled by an intracavity photonic crystal mirror, to enhance the laser spectral properties. The devices operate in the continuous-wave regime at room temperature with a single frequency emission at 2.6 m.
Keywords :
aluminium compounds; gallium compounds; laser cavity resonators; laser mirrors; molecular beam epitaxial growth; photonic crystals; quantum well lasers; GaInAsSb-AlGaAsSb; GaSb; continuous-wave regime; intracavity photonic crystal mirror; laser spectral properties; molecular beam epitaxy; photonic crystal coupled cavity lasers; quantum wells lasers; ridge cavities; single frequency emission; temperature 293 K to 298 K; wavelength 2.6 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.2129
