Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes

Author

Ishigaki, Kazuma ; Shiraishi, Masashi ; Suzuki, Satoshi ; Asada, Minoru ; Nishiyama, Naoto ; Arai, Shigehisa

Author_Institution

Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan

Volume

48

Issue

10

fYear

2012

Firstpage

582

Lastpage

583

Abstract

Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes (RTDs) is reported. A direct intensity modulation of the RTD oscillators was demonstrated, and the frequency response was measured. It was found that the 3 dB cutoff modulation frequency was limited by the parasitic elements of the external circuit, and increased up to 4.5 GHz by reducing such parasitic elements. Wireless data transmission by direct amplitude shift keying was demonstrated using an RTD oscillating at 542 GHz with cutoff frequency of 1.1 GHz. The BERs for bit rates of 2 and 3 Gbit/s were found to be 2 10^-8 and 3×10^-5, respectively.

Keywords

data communication; frequency response; modulation; radio networks; resonant tunnelling diodes; submillimetre wave diodes; submillimetre wave oscillators; bit rate 2 Gbit/s; bit rate 3 Gbit/s; direct intensity modulation; frequency 1.1 GHz; frequency 4.5 GHz; frequency 542 GHz; frequency response; modulation frequency; parasitic elements; terahertz-oscillating RTD oscillators; terahertz-oscillating resonant tunnelling diode oscillators; wireless data transmission characteristics;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2012.0849

Filename

6198533