Title :
Inverting and non-inverting operation of InP microdisc modulators
Author :
Hofrichter, Jens ; Morf, Thomas ; La Porta, Antonio ; Offrein, Bert Jan ; Mechet, Pauline ; Morthier, Geert ; de Vries, T. ; Dorren, H.J.S. ; Raz, Oded
Author_Institution :
IBM Res. - Zurich, Rüschlikon, Switzerland
Abstract :
Reported is the inverting and non-inverting operation of indium phosphide (InP)-based microdisc modulators heterogeneously integrated on a silicon-on-insulator waveguide. The light transmitted through the waveguide can be modulated in an inverting and non-inverting manner depending on the bias conditions. Static extinction ratios and dynamic operation of the device up to 2.5 Gbit/s are demonstrated. Clean open eyes with extinction ratios better than 6 dB are shown and operation with a bit error rate below 1 × 10-10 is demonstrated at 1.0 Gbit/s for both operation modes with a bias of only 1 Vpp.
Keywords :
III-V semiconductors; indium compounds; modulators; silicon-on-insulator; waveguides; InP; Si; bit rate 1.0 Gbit/s; bit rate 2.5 Gbit/s; indium phosphide-based microdisc modulators; noninverting operation; silicon-on-insulator waveguide; voltage 1 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.0684