Threshold Characteristics of Quantum Dot Rolled-Up Microtube Lasers

Author

Heo, Junseok ; Bhowmick, Sishir ; Bhattacharya, Pallab

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

Volume

48

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

927

Lastpage

933

Abstract

We have investigated the threshold behavior of GaAs-based InAs self-organized quantum dot microtube lasers. The laser heterostructures were grown by molecular beam epitaxy and the devices were fabricated by standard optical lithography and etching techniques. Measurements have been made on microtube lasers of diameters 6, 9, and 12 . The spectral characteristics were measured by micro-photoluminescence and the data have been analyzed by considering the confinement and mode characteristics of the microtube. The threshold condition was derived after considering radiation, bending, and substrate losses associated with the devices. The threshold modal gain and excitation power are found to depend inversely on the microtube diameter.

Keywords

III-V semiconductors; etching; gallium arsenide; indium compounds; laser cavity resonators; micro-optics; molecular beam epitaxial growth; optical fabrication; photolithography; photoluminescence; quantum dot lasers; GaAs-InAs; etching technique; microphotoluminescence; molecular beam epitaxy; optical lithography; quantum dot rolled-up microtube lasers; self-organized quantum dot microtube laser; spectral characteristics; Electron tubes; Laser excitation; Measurement by laser beam; Optical ring resonators; Quantum dot lasers; Quantum dots; Substrates; Laser; micro-photoluminescence; quantum dot; rolled-up microtube;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2012.2197177

Filename

6198753