DC-Charged GaAs PCSSs for Trigger Generators and Other High-Voltage Applications

The demand for greater flexibility and increased energy density in pulsed-power systems is moving highly interactive components closer together. The development of compact technologies for less complex and more robust system designs is critical. A key system component that can impact these goals is the trigger generator (TG). Inexpensive, compact, and fiber-optically controlled TGs that deliver trigger pulses with subnanosecond jitter have been created with photoconductive semiconductor switches (PCSSs). However, high-voltage (HV) GaAs PCSSs are typically pulsed charged for less than 100 s so that they can hold off 60-100 kV/cm without self-triggering into high-gain (lock-on) switching or initiating surface flashover. Since many new pulsed-power system designs are based on dc-charged HV switches, pulse charging the trigger system is an additional complication requiring space, HV switching components, and HV cables. A further improvement in PCSS-based TG is to move from pulsed to dc-charged PCSSs. This paper reports results from dc-charged GaAs PCSSs with 0.25-1.0 cm gaps, extending previously reported results on smaller devices at 3 kV to a new regime of 100 kV. To hold off high fields for longer periods and to extend GaAs PCSSs to dc applications, we have utilized neutron-irradiated GaAs (n-GaAs). Neutron irradiation in GaAs increases the defect density, shortens the carrier recombination time, and (for devices with large insulating regions) reduces the dark current, which improves the dc hold-off strength. PCSS contacts in this research were created using rapid thermal annealing (RTA) to produce high adhesion and low contact resistance. However, this can reduce the defect density near the contacts by annealing some of the n-induced defects. Hence, a range of RTA temperatures and neutron doses was studied to understand the tradeoff space for contact adhesion and dc hold-off. This paper presents results from I-V characterization and dc hold-off on irradiated and non- - irradiated GaAs PCSSs. These PCSS devices were demonstrated to hold off fields of 39-61 kVDC/cm, respectively. Irradiation doses over a range of 3×10¹³ - 1×10¹⁵ (1 MeV Si equivalent) were explored in search of the optimal performance. Additionally, the impact of the fabrication processes on the benefits of irradiation is explored, and the observation of unusual low-frequency oscillations during GaAs I-V testing is discussed.