Analytical Approximation for the Surface Potential in n-Channel MOSFETs Considering Quantum–Mechanical Effects

Author

Jayadeva, G.S. ; DasGupta, Amitava

Author_Institution

Dept. of Electr. Eng., IIT Madras, Chennai, India

Volume

57

Issue

8

fYear

2010

Firstpage

1820

Lastpage

1828

Abstract

A physics-based analytical model for the surface potential in n-channel MOSFETs considering quantum-mechanical effects in the inversion region is presented. The model is continuous from the accumulation to strong inversion regions of operation. The results from the model show excellent agreement with the values obtained from a self-consistent solution of the Schrödinger and Poisson equations. The transconductance and current-voltage characteristics of MOSFETs obtained using the surface-potential values calculated from our model also agree very well with those obtained from numerical methods and reported data.

Keywords

MOSFET; Poisson equation; Schrodinger equation; surface potential; Poisson equation; Schrodinger equation; analytical model; current-voltage characteristic; inversion region; nchannel MOSFET; quantum mechanical effects; surface potential values; transconductance characteristic; Analytical models; Helium; MOSFETs; Poisson equations; Potential well; Quantum mechanics; Semiconductor device doping; Semiconductor process modeling; Smoothing methods; Transconductance; Analytical model; nMOSFETs; quantum–mechanical (QM) effect; surface potential;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2050959

Filename

5484427